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IXFN24N100F

IXFN24N100F

For Reference Only

Part Number IXFN24N100F
PNEDA Part # IXFN24N100F
Description MOSFET N-CH 1000V 24A SOT227B
Manufacturer IXYS-RF
Unit Price
1 ---------- $261.1215
50 ---------- $248.8815
100 ---------- $236.6414
200 ---------- $224.4013
400 ---------- $214.2013
500 ---------- $204.0012
In Stock 225
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN24N100F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFN24N100F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN24N100F, IXFN24N100F Datasheet (Total Pages: 2, Size: 92.95 KB)
PDFIXFN24N100F Datasheet Cover
IXFN24N100F Datasheet Page 2

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IXFN24N100F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6600pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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