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IXFN27N80

IXFN27N80

For Reference Only

Part Number IXFN27N80
PNEDA Part # IXFN27N80
Description MOSFET N-CH 800V 27A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN27N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN27N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN27N80, IXFN27N80 Datasheet (Total Pages: 4, Size: 162.52 KB)
PDFIXFK27N80 Datasheet Cover
IXFK27N80 Datasheet Page 2 IXFK27N80 Datasheet Page 3 IXFK27N80 Datasheet Page 4

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IXFN27N80 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs300mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs400nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9740pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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