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IXFN27N80Q

IXFN27N80Q

For Reference Only

Part Number IXFN27N80Q
PNEDA Part # IXFN27N80Q
Description MOSFET N-CH 800V 27A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN27N80Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN27N80Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN27N80Q, IXFN27N80Q Datasheet (Total Pages: 2, Size: 108.44 KB)
PDFIXFN27N80Q Datasheet Cover
IXFN27N80Q Datasheet Page 2

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IXFN27N80Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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