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IXFN60N80P

IXFN60N80P

For Reference Only

Part Number IXFN60N80P
PNEDA Part # IXFN60N80P
Description MOSFET N-CH 800V 53A SOT-227B
Manufacturer IXYS
Unit Price
1 ---------- $372.1818
50 ---------- $354.7357
100 ---------- $337.2897
200 ---------- $319.8437
400 ---------- $305.3054
500 ---------- $290.7670
In Stock 87
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN60N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN60N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFN60N80P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 30A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds18000pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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