Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN70N60Q2

IXFN70N60Q2

For Reference Only

Part Number IXFN70N60Q2
PNEDA Part # IXFN70N60Q2
Description MOSFET N-CH 600V 70A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,266
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN70N60Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN70N60Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN70N60Q2, IXFN70N60Q2 Datasheet (Total Pages: 4, Size: 566.73 KB)
PDFIXFN70N60Q2 Datasheet Cover
IXFN70N60Q2 Datasheet Page 2 IXFN70N60Q2 Datasheet Page 3 IXFN70N60Q2 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFN70N60Q2 Datasheet
  • where to find IXFN70N60Q2
  • IXYS

  • IXYS IXFN70N60Q2
  • IXFN70N60Q2 PDF Datasheet
  • IXFN70N60Q2 Stock

  • IXFN70N60Q2 Pinout
  • Datasheet IXFN70N60Q2
  • IXFN70N60Q2 Supplier

  • IXYS Distributor
  • IXFN70N60Q2 Price
  • IXFN70N60Q2 Distributor

IXFN70N60Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 35A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs265nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7200pF @ 25V
FET Feature-
Power Dissipation (Max)890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

SKI06048

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

90.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6210pF @ 25V

FET Feature

-

Power Dissipation (Max)

135W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STF2N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 10V

Vgs (Max)

30V

Input Capacitance (Ciss) (Max) @ Vds

95pF @ 100V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

STP360N4F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

340nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17930pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

BSC054N04NSGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 27µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

IRLML2502TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

4608X-102-103LF

4608X-102-103LF

Bourns

RES ARRAY 4 RES 10K OHM 8SIP

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

ADR421ARZ

ADR421ARZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

SFH6106-2T

SFH6106-2T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV TRANS 4-SMD

MAX7360ETL+T

MAX7360ETL+T

Maxim Integrated

IC CTRLR KEY-SW I2C 40TQFN

VESD05A1B-02V-G-08

VESD05A1B-02V-G-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 11V SOD523

74V2G00STR

74V2G00STR

STMicroelectronics

IC GATE NAND 2CH 2-INP SOT23-8

ADG419BRZ

ADG419BRZ

Analog Devices

IC SWITCH SPDT 8SOIC

LTC1326IS8-2.5#PBF

LTC1326IS8-2.5#PBF

Linear Technology/Analog Devices

IC PREC TRPL SUPPLY MONITR 8SOIC

PCA9515ADP,118

PCA9515ADP,118

NXP

IC REDRIVER I2C 1CH 8TSSOP