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IXFP12N65X2

IXFP12N65X2

For Reference Only

Part Number IXFP12N65X2
PNEDA Part # IXFP12N65X2
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFP12N65X2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFP12N65X2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFP12N65X2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs310mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1134pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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