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IXFQ14N80P

IXFQ14N80P

For Reference Only

Part Number IXFQ14N80P
PNEDA Part # IXFQ14N80P
Description MOSFET N-CH 800V 14A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ14N80P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ14N80P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ14N80P, IXFQ14N80P Datasheet (Total Pages: 5, Size: 226.56 KB)
PDFIXFV14N80PS Datasheet Cover
IXFV14N80PS Datasheet Page 2 IXFV14N80PS Datasheet Page 3 IXFV14N80PS Datasheet Page 4 IXFV14N80PS Datasheet Page 5

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IXFQ14N80P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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