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IXFQ28N60P3

IXFQ28N60P3

For Reference Only

Part Number IXFQ28N60P3
PNEDA Part # IXFQ28N60P3
Description MOSFET N-CH 600V 28A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ28N60P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ28N60P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ28N60P3, IXFQ28N60P3 Datasheet (Total Pages: 5, Size: 131.01 KB)
PDFIXFH28N60P3 Datasheet Cover
IXFH28N60P3 Datasheet Page 2 IXFH28N60P3 Datasheet Page 3 IXFH28N60P3 Datasheet Page 4 IXFH28N60P3 Datasheet Page 5

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IXFQ28N60P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs260mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3560pF @ 25V
FET Feature-
Power Dissipation (Max)695W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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