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IXFQ50N60P3

IXFQ50N60P3

For Reference Only

Part Number IXFQ50N60P3
PNEDA Part # IXFQ50N60P3
Description MOSFET N-CH 600V 50A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ50N60P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ50N60P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ50N60P3, IXFQ50N60P3 Datasheet (Total Pages: 5, Size: 146.64 KB)
PDFIXFT50N60P3 Datasheet Cover
IXFT50N60P3 Datasheet Page 2 IXFT50N60P3 Datasheet Page 3 IXFT50N60P3 Datasheet Page 4 IXFT50N60P3 Datasheet Page 5

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IXFQ50N60P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs145mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6300pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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