Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFQ50N60X

IXFQ50N60X

For Reference Only

Part Number IXFQ50N60X
PNEDA Part # IXFQ50N60X
Description MOSFET N-CH 600V 50A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFQ50N60X Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFQ50N60X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFQ50N60X, IXFQ50N60X Datasheet (Total Pages: 6, Size: 184.49 KB)
PDFIXFT50N60X Datasheet Cover
IXFT50N60X Datasheet Page 2 IXFT50N60X Datasheet Page 3 IXFT50N60X Datasheet Page 4 IXFT50N60X Datasheet Page 5 IXFT50N60X Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFQ50N60X Datasheet
  • where to find IXFQ50N60X
  • IXYS

  • IXYS IXFQ50N60X
  • IXFQ50N60X PDF Datasheet
  • IXFQ50N60X Stock

  • IXFQ50N60X Pinout
  • Datasheet IXFQ50N60X
  • IXFQ50N60X Supplier

  • IXYS Distributor
  • IXFQ50N60X Price
  • IXFQ50N60X Distributor

IXFQ50N60X Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs73mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4660pF @ 25V
FET Feature-
Power Dissipation (Max)660W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

The Products You May Be Interested In

AOTF10T60PL

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

700mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1595pF @ 100V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

STWA20N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

1HN04CH-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

8Ohm @ 140mA, 10V

Vgs(th) (Max) @ Id

2.6V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

0.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 20V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3

FDP083N15A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6040pF @ 25V

FET Feature

-

Power Dissipation (Max)

294W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

TN0104N3-G-P003

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

1.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

70pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

AP2202K-3.3TRG1

AP2202K-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 150MA SOT23-5

FGH75T65UPD

FGH75T65UPD

ON Semiconductor

IGBT 650V 150A 375W TO-247AB

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

MAX3218EAP+T

MAX3218EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

PDB-C134

PDB-C134

Advanced Photonix

SENSOR PHOTODIODE 950NM RADIAL

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

TCA785

TCA785

Infineon Technologies

IC PHASE CONTROL 250MA OUT 16DIP

4608X-102-471LF

4608X-102-471LF

Bourns

RES ARRAY 4 RES 470 OHM 8SIP

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

MCP73833-FCI/UN

MCP73833-FCI/UN

Microchip Technology

IC LI-ION/LI-POLY CTRLR 10MSOP

ADG406BPZ-REEL

ADG406BPZ-REEL

Analog Devices

IC MULTIPLEXER 16X1 28PLCC

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO