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IXFR10N100Q

IXFR10N100Q

For Reference Only

Part Number IXFR10N100Q
PNEDA Part # IXFR10N100Q
Description MOSFET N-CH 1000V 9A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR10N100Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR10N100Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR10N100Q, IXFR10N100Q Datasheet (Total Pages: 2, Size: 154.93 KB)
PDFIXFR10N100Q Datasheet Cover
IXFR10N100Q Datasheet Page 2

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IXFR10N100Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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