IXFR14N100Q2
For Reference Only
| Part Number | IXFR14N100Q2 |
| PNEDA Part # | IXFR14N100Q2 |
| Description | MOSFET N-CH 1KV 9.5A ISOPLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFR14N100Q2 Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFR14N100Q2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFR14N100Q2 Datasheet
- where to find IXFR14N100Q2
- IXYS
- IXYS IXFR14N100Q2
- IXFR14N100Q2 PDF Datasheet
- IXFR14N100Q2 Stock
- IXFR14N100Q2 Pinout
- Datasheet IXFR14N100Q2
- IXFR14N100Q2 Supplier
- IXYS Distributor
- IXFR14N100Q2 Price
- IXFR14N100Q2 Distributor
IXFR14N100Q2 Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 83nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS247™ |
| Package / Case | ISOPLUS247™ |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 42A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 580mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 550V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 100V FET Feature - Power Dissipation (Max) 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN |
