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IXFR15N100Q3

IXFR15N100Q3

For Reference Only

Part Number IXFR15N100Q3
PNEDA Part # IXFR15N100Q3
Description MOSFET N-CH 1000V 10A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
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IXFR15N100Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR15N100Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR15N100Q3, IXFR15N100Q3 Datasheet (Total Pages: 5, Size: 145.28 KB)
PDFIXFR15N100Q3 Datasheet Cover
IXFR15N100Q3 Datasheet Page 2 IXFR15N100Q3 Datasheet Page 3 IXFR15N100Q3 Datasheet Page 4 IXFR15N100Q3 Datasheet Page 5

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IXFR15N100Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 7.5A, 10V
Vgs(th) (Max) @ Id6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3250pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseTO-247-3

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