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IXFR16N120P

IXFR16N120P

For Reference Only

Part Number IXFR16N120P
PNEDA Part # IXFR16N120P
Description MOSFET N-CH 1200V 9A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR16N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR16N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR16N120P, IXFR16N120P Datasheet (Total Pages: 5, Size: 146.72 KB)
PDFIXFR16N120P Datasheet Cover
IXFR16N120P Datasheet Page 2 IXFR16N120P Datasheet Page 3 IXFR16N120P Datasheet Page 4 IXFR16N120P Datasheet Page 5

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IXFR16N120P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.04Ohm @ 8A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6900pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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