Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR48N60P

IXFR48N60P

For Reference Only

Part Number IXFR48N60P
PNEDA Part # IXFR48N60P
Description MOSFET N-CH 600V 32A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR48N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR48N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR48N60P, IXFR48N60P Datasheet (Total Pages: 4, Size: 144.09 KB)
PDFIXFR48N60P Datasheet Cover
IXFR48N60P Datasheet Page 2 IXFR48N60P Datasheet Page 3 IXFR48N60P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFR48N60P Datasheet
  • where to find IXFR48N60P
  • IXYS

  • IXYS IXFR48N60P
  • IXFR48N60P PDF Datasheet
  • IXFR48N60P Stock

  • IXFR48N60P Pinout
  • Datasheet IXFR48N60P
  • IXFR48N60P Supplier

  • IXYS Distributor
  • IXFR48N60P Price
  • IXFR48N60P Distributor

IXFR48N60P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8860pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

The Products You May Be Interested In

STW65N80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3230pF @ 100V

FET Feature

-

Power Dissipation (Max)

446W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

RQ5E035BNTCL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

37mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 15V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96

SI7129DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.4mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3345pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 52.1W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

TPH6R30ANL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

66A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 54W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

240mOhm @ 8A, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

199nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5250pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

695W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Recently Sold

MAX13035EETE+

MAX13035EETE+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 16TQFN

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

3314J-1-104E

3314J-1-104E

Bourns

TRIMMER 100KOHM 0.25W J LEAD TOP

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

SRDA05-4.TBT

SRDA05-4.TBT

Semtech

TVS DIODE 5V 20V 8SO

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

LTM4616EV#PBF

LTM4616EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 0.6-5V

EPM7128SQC100-10N

EPM7128SQC100-10N

Intel

IC CPLD 128MC 10NS 100QFP

VO14642AABTR

VO14642AABTR

Vishay Semiconductor Opto Division

SSR RELAY SPST-NO 2A 0-60V

EXB-2HV510JV

EXB-2HV510JV

Panasonic Electronic Components

RES ARRAY 8 RES 51 OHM 1506

NDT454P

NDT454P

ON Semiconductor

MOSFET P-CH 30V 5.9A SOT-223