Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFR55N50

IXFR55N50

For Reference Only

Part Number IXFR55N50
PNEDA Part # IXFR55N50
Description MOSFET N-CH 500V 48A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFR55N50 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFR55N50
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFR55N50, IXFR55N50 Datasheet (Total Pages: 2, Size: 76.63 KB)
PDFIXFR55N50 Datasheet Cover
IXFR55N50 Datasheet Page 2

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFR55N50 Datasheet
  • where to find IXFR55N50
  • IXYS

  • IXYS IXFR55N50
  • IXFR55N50 PDF Datasheet
  • IXFR55N50 Stock

  • IXFR55N50 Pinout
  • Datasheet IXFR55N50
  • IXFR55N50 Supplier

  • IXYS Distributor
  • IXFR55N50 Price
  • IXFR55N50 Distributor

IXFR55N50 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

The Products You May Be Interested In

TSM6N50CH C5G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (IPAK)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IPN95R1K2P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

478pF @ 400V

FET Feature

-

Power Dissipation (Max)

7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

TO-261-3

STF13NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

845pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

IRLML6402GTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

633pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

SSM3J371R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 4.5V

Vgs (Max)

+6V, -8V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

Recently Sold

V5.5MLA0603NH

V5.5MLA0603NH

Littelfuse

VARISTOR 8.2V 30A 0603

LTC6995IS6-1#TRMPBF

LTC6995IS6-1#TRMPBF

Linear Technology/Analog Devices

IC OSC SILICON PROG TSOT23-6

LTW-C191DS5

LTW-C191DS5

Lite-On Inc.

LED WHITE CHIP SMD

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917

FIN1019MTCX

FIN1019MTCX

ON Semiconductor

IC TRANSCEIVER FULL 1/1 14TSSOP

FDD86540

FDD86540

ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3

3214W-1-502E

3214W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

NTGS5120PT1G

NTGS5120PT1G

ON Semiconductor

MOSFET P-CH 60V 1.8A 6-TSOP

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

L6563H

L6563H

STMicroelectronics

IC PFC CTRLR TRANSITION 16SOIC