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IXFT150N17T2

IXFT150N17T2

For Reference Only

Part Number IXFT150N17T2
PNEDA Part # IXFT150N17T2
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT150N17T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT150N17T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT150N17T2, IXFT150N17T2 Datasheet (Total Pages: 6, Size: 181.2 KB)
PDFIXFT150N17T2 Datasheet Cover
IXFT150N17T2 Datasheet Page 2 IXFT150N17T2 Datasheet Page 3 IXFT150N17T2 Datasheet Page 4 IXFT150N17T2 Datasheet Page 5 IXFT150N17T2 Datasheet Page 6

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IXFT150N17T2 Specifications

ManufacturerIXYS
SeriesHiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)175V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs233nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14600pF @ 25V
FET Feature-
Power Dissipation (Max)880W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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