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IXFT86N30T

IXFT86N30T

For Reference Only

Part Number IXFT86N30T
PNEDA Part # IXFT86N30T
Description MOSFET N-CH 300V 86A TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFT86N30T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFT86N30T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFT86N30T, IXFT86N30T Datasheet (Total Pages: 6, Size: 173.9 KB)
PDFIXFH86N30T Datasheet Cover
IXFH86N30T Datasheet Page 2 IXFH86N30T Datasheet Page 3 IXFH86N30T Datasheet Page 4 IXFH86N30T Datasheet Page 5 IXFH86N30T Datasheet Page 6

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IXFT86N30T Specifications

ManufacturerIXYS
SeriesHiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs43mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11300pF @ 25V
FET Feature-
Power Dissipation (Max)860W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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