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IXFX180N25T

IXFX180N25T

For Reference Only

Part Number IXFX180N25T
PNEDA Part # IXFX180N25T
Description MOSFET N-CH 250V 180A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX180N25T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX180N25T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX180N25T, IXFX180N25T Datasheet (Total Pages: 6, Size: 171.48 KB)
PDFIXFX180N25T Datasheet Cover
IXFX180N25T Datasheet Page 2 IXFX180N25T Datasheet Page 3 IXFX180N25T Datasheet Page 4 IXFX180N25T Datasheet Page 5 IXFX180N25T Datasheet Page 6

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IXFX180N25T Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs345nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds28000pF @ 25V
FET Feature-
Power Dissipation (Max)1390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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