IXFX52N100X
For Reference Only
| Part Number | IXFX52N100X |
| PNEDA Part # | IXFX52N100X |
| Description | MOSFET 1KV 52A ULTRA JCT PLUS247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IXFX52N100X Resources
| Brand | IXYS |
| ECAD Module |
|
| Mfr. Part Number | IXFX52N100X |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFX52N100X Datasheet
- where to find IXFX52N100X
- IXYS
- IXYS IXFX52N100X
- IXFX52N100X PDF Datasheet
- IXFX52N100X Stock
- IXFX52N100X Pinout
- Datasheet IXFX52N100X
- IXFX52N100X Supplier
- IXYS Distributor
- IXFX52N100X Price
- IXFX52N100X Distributor
IXFX52N100X Specifications
| Manufacturer | IXYS |
| Series | HiPerFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 6V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 245nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6725pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™ |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 68nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 4307pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220F-3SG Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 7mOhm @ 64A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 190V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 336mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
