IXGA48N60B3
For Reference Only
| Part Number | IXGA48N60B3 |
| PNEDA Part # | IXGA48N60B3 |
| Description | IGBT 600V 300W TO263AA |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 3,006 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXGA48N60B3 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXGA48N60B3 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXGA48N60B3 Specifications
| Manufacturer | IXYS |
| Series | GenX3™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 280A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 32A |
| Power - Max | 300W |
| Switching Energy | 840µJ (on), 660µJ (off) |
| Input Type | Standard |
| Gate Charge | 115nC |
| Td (on/off) @ 25°C | 22ns/130ns |
| Test Condition | 480V, 30A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (IXGA) |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1500V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 5.5V @ 10V, 5A Power - Max 125W Switching Energy 190µJ (on), 100µJ (off) Input Type Standard Gate Charge 30nC Td (on/off) @ 25°C 10ns/30ns Test Condition 600V, 5A, 10Ohm, 10V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264-3 |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2V @ 15V, 150A Power - Max - Switching Energy - Input Type Standard Gate Charge 820nC Td (on/off) @ 25°C 115ns/570ns Test Condition 600V, 150A, 2Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 330V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 60A Power - Max 78W Switching Energy - Input Type Standard Gate Charge 33nC Td (on/off) @ 25°C 1ns/65ns Test Condition 196V, 12A, 10Ohm Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
