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IXGH10N170

IXGH10N170

For Reference Only

Part Number IXGH10N170
PNEDA Part # IXGH10N170
Description IGBT 1700V 20A 110W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH10N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH10N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH10N170, IXGH10N170 Datasheet (Total Pages: 5, Size: 189.44 KB)
PDFIXGT10N170 Datasheet Cover
IXGT10N170 Datasheet Page 2 IXGT10N170 Datasheet Page 3 IXGT10N170 Datasheet Page 4 IXGT10N170 Datasheet Page 5

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IXGH10N170 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 10A
Power - Max110W
Switching Energy-
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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