IXGH20N120A3
For Reference Only
| Part Number | IXGH20N120A3 |
| PNEDA Part # | IXGH20N120A3 |
| Description | IGBT 1200V 40A 180W TO247 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 6,750 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXGH20N120A3 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXGH20N120A3 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXGH20N120A3 Specifications
| Manufacturer | IXYS |
| Series | GenX3™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 40A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Power - Max | 180W |
| Switching Energy | 2.85mJ (on), 6.47mJ (off) |
| Input Type | Standard |
| Gate Charge | 50nC |
| Td (on/off) @ 25°C | 16ns/290ns |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD (IXGH) |
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Manufacturer Rohm Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A Power - Max 133W Switching Energy - Input Type Standard Gate Charge 32nC Td (on/off) @ 25°C 18ns/64ns Test Condition 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr) 55ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package LPDS |
Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) 140A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A Power - Max 543W Switching Energy 750µJ (on), 680µJ (off) Input Type Standard Gate Charge 150nC Td (on/off) @ 25°C 16ns/95ns Test Condition 600V, 35A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant Supplier Device Package - |
Manufacturer IXYS Series GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) 370A Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 44A Power - Max 330W Switching Energy 1mJ (on), 3.75mJ (off) Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 26ns/310ns Test Condition 480V, 44A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXGH) |
