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IXGH2N250

IXGH2N250

For Reference Only

Part Number IXGH2N250
PNEDA Part # IXGH2N250
Description IGBT 2500V 5.5A 32W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH2N250 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH2N250
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH2N250, IXGH2N250 Datasheet (Total Pages: 5, Size: 177.95 KB)
PDFIXGH2N250 Datasheet Cover
IXGH2N250 Datasheet Page 2 IXGH2N250 Datasheet Page 3 IXGH2N250 Datasheet Page 4 IXGH2N250 Datasheet Page 5

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IXGH2N250 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)5.5A
Current - Collector Pulsed (Icm)13.5A
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 2A
Power - Max32W
Switching Energy-
Input TypeStandard
Gate Charge10.5nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

115A

Vce(on) (Max) @ Vge, Ic

4.2V @ 15V, 24A

Power - Max

250W

Switching Energy

1.45mJ (on), 470µJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

18ns/106ns

Test Condition

600V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

380µJ (on), 3.5mJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

200V, 55A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

743µJ (on), 560µJ (off)

Input Type

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Gate Charge

195nC

Td (on/off) @ 25°C

40ns/240ns

Test Condition

390V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

450A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Power - Max

540W

Switching Energy

1.4mJ (on), 1mJ (off)

Input Type

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Gate Charge

225nC

Td (on/off) @ 25°C

31ns/152ns

Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

STGW30M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Power - Max

258W

Switching Energy

300µJ (on), 960µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

31.6ns/115ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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