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IXGH32N60C

IXGH32N60C

For Reference Only

Part Number IXGH32N60C
PNEDA Part # IXGH32N60C
Description IGBT 600V 60A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH32N60C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH32N60C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH32N60C, IXGH32N60C Datasheet (Total Pages: 4, Size: 117.66 KB)
PDFIXGT32N60C Datasheet Cover
IXGT32N60C Datasheet Page 2 IXGT32N60C Datasheet Page 3 IXGT32N60C Datasheet Page 4

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IXGH32N60C Specifications

ManufacturerIXYS
SeriesHiPerFAST™, Lightspeed™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 32A
Power - Max200W
Switching Energy320µJ (off)
Input TypeStandard
Gate Charge110nC
Td (on/off) @ 25°C25ns/85ns
Test Condition480V, 32A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Operating Temperature

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Current - Collector Pulsed (Icm)

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Input Type

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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