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IXGH35N120C

IXGH35N120C

For Reference Only

Part Number IXGH35N120C
PNEDA Part # IXGH35N120C
Description IGBT 1200V 70A 300W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,592
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH35N120C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH35N120C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH35N120C, IXGH35N120C Datasheet (Total Pages: 2, Size: 53.74 KB)
PDFIXGH35N120C Datasheet Cover
IXGH35N120C Datasheet Page 2

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IXGH35N120C Specifications

ManufacturerIXYS
SeriesLightspeed™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max300W
Switching Energy3mJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C50ns/150ns
Test Condition960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

XPT™, GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Power - Max

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Switching Energy

3mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

47ns/125ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 10A

Power - Max

115W

Switching Energy

120µJ (on), 270µJ (off)

Input Type

Standard

Gate Charge

28nC

Td (on/off) @ 25°C

19ns/91ns

Test Condition

400V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

96ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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NGTB30N120IHSWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Power - Max

192W

Switching Energy

1mJ (off)

Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

-/210ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

APT43GA90B

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

78A

Current - Collector Pulsed (Icm)

129A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 25A

Power - Max

337W

Switching Energy

875µJ (on), 425µJ (off)

Input Type

Standard

Gate Charge

116nC

Td (on/off) @ 25°C

12ns/82ns

Test Condition

600V, 25A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

RGT8TM65DGC9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

5A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

16W

Switching Energy

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Input Type

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Gate Charge

13.5nC

Td (on/off) @ 25°C

17ns/69ns

Test Condition

400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NFM

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