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IXGH60N60

IXGH60N60

For Reference Only

Part Number IXGH60N60
PNEDA Part # IXGH60N60
Description IGBT 600V 75A 300W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,266
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH60N60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH60N60
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH60N60, IXGH60N60 Datasheet (Total Pages: 4, Size: 95.93 KB)
PDFIXGT60N60 Datasheet Cover
IXGT60N60 Datasheet Page 2 IXGT60N60 Datasheet Page 3 IXGT60N60 Datasheet Page 4

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IXGH60N60 Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 60A
Power - Max300W
Switching Energy8mJ (off)
Input TypeStandard
Gate Charge130nC
Td (on/off) @ 25°C50ns/300ns
Test Condition480V, 60A, 2.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 5A

Power - Max

140W

Switching Energy

380µJ (off)

Input Type

Standard

Gate Charge

29nC

Td (on/off) @ 25°C

46ns/190ns

Test Condition

850V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 40A

Power - Max

300W

Switching Energy

830µJ (on), 650µJ (off)

Input Type

Standard

Gate Charge

66nC

Td (on/off) @ 25°C

23ns/110ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

IRG6I330U-168P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.55V @ 15V, 28A

Power - Max

43W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

APT68GA60B2D40

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

121A

Current - Collector Pulsed (Icm)

202A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

520W

Switching Energy

715µJ (on), 607µJ (off)

Input Type

Standard

Gate Charge

198nC

Td (on/off) @ 25°C

21ns/133ns

Test Condition

400V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

-

IRG4BC30FD1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

370µJ (on), 1.42mJ (off)

Input Type

Standard

Gate Charge

57nC

Td (on/off) @ 25°C

22ns/250ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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