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IXGH60N60C3

IXGH60N60C3

For Reference Only

Part Number IXGH60N60C3
PNEDA Part # IXGH60N60C3
Description IGBT 600V 75A 380W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH60N60C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH60N60C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH60N60C3, IXGH60N60C3 Datasheet (Total Pages: 6, Size: 165.77 KB)
PDFIXGH60N60C3 Datasheet Cover
IXGH60N60C3 Datasheet Page 2 IXGH60N60C3 Datasheet Page 3 IXGH60N60C3 Datasheet Page 4 IXGH60N60C3 Datasheet Page 5 IXGH60N60C3 Datasheet Page 6

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IXGH60N60C3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)360A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max380W
Switching Energy800µJ (on), 450µJ (off)
Input TypeStandard
Gate Charge115nC
Td (on/off) @ 25°C21ns/70ns
Test Condition480V, 40A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 24A

Power - Max

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Switching Energy

320µJ (off)

Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

13ns/110ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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RGS00TS65DHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

326W

Switching Energy

1.46mJ (on), 1.29mJ (off)

Input Type

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Gate Charge

58nC

Td (on/off) @ 25°C

36ns/115ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

103ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247N

Manufacturer

IXYS

Series

XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

4.5V @ 15V, 12A

Power - Max

310W

Switching Energy

3.56mJ (on), 1.7mJ (off)

Input Type

Standard

Gate Charge

56nC

Td (on/off) @ 25°C

12ns/167ns

Test Condition

1250V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

16ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

RGT8TM65DGC9

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

5A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

16W

Switching Energy

-

Input Type

Standard

Gate Charge

13.5nC

Td (on/off) @ 25°C

17ns/69ns

Test Condition

400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

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