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IXGH90N60B3

IXGH90N60B3

For Reference Only

Part Number IXGH90N60B3
PNEDA Part # IXGH90N60B3
Description IGBT 600V 75A 660W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH90N60B3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH90N60B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH90N60B3, IXGH90N60B3 Datasheet (Total Pages: 6, Size: 174.49 KB)
PDFIXGH90N60B3 Datasheet Cover
IXGH90N60B3 Datasheet Page 2 IXGH90N60B3 Datasheet Page 3 IXGH90N60B3 Datasheet Page 4 IXGH90N60B3 Datasheet Page 5 IXGH90N60B3 Datasheet Page 6

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IXGH90N60B3 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)500A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 90A
Power - Max660W
Switching Energy1.32mJ (on), 1.37mJ (off)
Input TypeStandard
Gate Charge172nC
Td (on/off) @ 25°C31ns/150ns
Test Condition480V, 60A, 2Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

140µJ (on), 120µJ (off)

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Td (on/off) @ 25°C

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Test Condition

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

8.2A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

29W

Switching Energy

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Input Type

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8.6nC

Td (on/off) @ 25°C

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Test Condition

800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-220-3 Full Pack

Supplier Device Package

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