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IXGJ40N60C2D1

IXGJ40N60C2D1

For Reference Only

Part Number IXGJ40N60C2D1
PNEDA Part # IXGJ40N60C2D1
Description IGBT 600V 75A 300W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGJ40N60C2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGJ40N60C2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGJ40N60C2D1, IXGJ40N60C2D1 Datasheet (Total Pages: 6, Size: 170.25 KB)
PDFIXGT40N60C2D1 Datasheet Cover
IXGT40N60C2D1 Datasheet Page 2 IXGT40N60C2D1 Datasheet Page 3 IXGT40N60C2D1 Datasheet Page 4 IXGT40N60C2D1 Datasheet Page 5 IXGT40N60C2D1 Datasheet Page 6

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IXGJ40N60C2D1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max300W
Switching Energy200µJ (off)
Input TypeStandard
Gate Charge95nC
Td (on/off) @ 25°C18ns/90ns
Test Condition400V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3, Short Tab
Supplier Device PackageTO-268

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 100A

Power - Max

830W

Switching Energy

10mJ (on), 33mJ (off)

Input Type

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Gate Charge

420nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

960V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

4.5V @ 15V, 12A

Power - Max

310W

Switching Energy

3.56mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

56nC

Td (on/off) @ 25°C

12ns/167ns

Test Condition

1250V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

16ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

63-7000PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Package / Case

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Supplier Device Package

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STGF5H60DF

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 5A

Power - Max

24W

Switching Energy

56µJ (on), 78.5µJ (off)

Input Type

Standard

Gate Charge

43nC

Td (on/off) @ 25°C

30ns/140ns

Test Condition

400V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

134.5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

IRG4PC40SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 31A

Power - Max

160W

Switching Energy

450µJ (on), 6.5mJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

22ns/650ns

Test Condition

480V, 31A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

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