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IXGK100N170

IXGK100N170

For Reference Only

Part Number IXGK100N170
PNEDA Part # IXGK100N170
Description IGBT PT 1000V 120A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGK100N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGK100N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGK100N170 Specifications

ManufacturerIXYS
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

250W

Switching Energy

2.7mJ (off)

Input Type

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Gate Charge

116nC

Td (on/off) @ 25°C

25ns/180ns

Test Condition

480V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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STMicroelectronics

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

21A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Power - Max

56W

Switching Energy

20µJ (on), 68µJ (off)

Input Type

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Gate Charge

13.6nC

Td (on/off) @ 25°C

12ns/76ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

21ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGFW35HF60W

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

36A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

88W

Switching Energy

290µJ (on), 185µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

30ns/175ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

121A

Current - Collector Pulsed (Icm)

202A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

520W

Switching Energy

715µJ (on), 607µJ (off)

Input Type

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Gate Charge

298nC

Td (on/off) @ 25°C

21ns/133ns

Test Condition

400V, 40A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

250W

Switching Energy

3mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

50ns/110ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

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