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IXGK35N120BD1

IXGK35N120BD1

For Reference Only

Part Number IXGK35N120BD1
PNEDA Part # IXGK35N120BD1
Description IGBT 1200V 70A 350W TO264AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGK35N120BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGK35N120BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGK35N120BD1, IXGK35N120BD1 Datasheet (Total Pages: 2, Size: 41.96 KB)
PDFIXGX35N120BD1 Datasheet Cover
IXGX35N120BD1 Datasheet Page 2

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IXGK35N120BD1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
Power - Max350W
Switching Energy3.8mJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C50ns/180ns
Test Condition960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXGK)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 80A, 1Ohm, 15V

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Operating Temperature

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Package / Case

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.3mJ (on), 260µJ (off)

Input Type

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Gate Charge

119nC

Td (on/off) @ 25°C

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Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

840µJ (on), 220µJ (off)

Input Type

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Gate Charge

230nC

Td (on/off) @ 25°C

45ns/417ns

Test Condition

400V, 25A, 16Ohm, 15V

Reverse Recovery Time (trr)

110ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

260W

Switching Energy

185µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

30ns/175ns

Test Condition

390V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Manufacturer

IXYS

Series

XPT™, GenX4™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

440A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 75A

Power - Max

1150W

Switching Energy

4.5mJ (on), 2.7mJ (off)

Input Type

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Gate Charge

157nC

Td (on/off) @ 25°C

22ns/182ns

Test Condition

600V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

66ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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