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IXGM20N60A

IXGM20N60A

For Reference Only

Part Number IXGM20N60A
PNEDA Part # IXGM20N60A
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM20N60A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM20N60A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGM20N60A Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Power - Max150W
Switching Energy2mJ (on), 2mJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C100ns/600ns
Test Condition480V, 20A, 82Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 12A

Power - Max

75W

Switching Energy

5.4mJ (off)

Input Type

Standard

Gate Charge

24nC

Td (on/off) @ 25°C

15ns/680ns

Test Condition

960V, 12A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

75µJ (on), 225µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

28A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 7A

Power - Max

88W

Switching Energy

99µJ (on), 100µJ (off)

Input Type

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Gate Charge

46nC

Td (on/off) @ 25°C

30ns/160ns

Test Condition

400V, 7A, 47Ohm, 15V

Reverse Recovery Time (trr)

136ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.55V @ 15V, 28A

Power - Max

43W

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

39ns/120ns

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGB20NC60V

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

200W

Switching Energy

220µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

31ns/100ns

Test Condition

390V, 20A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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