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IXGM25N100A

IXGM25N100A

For Reference Only

Part Number IXGM25N100A
PNEDA Part # IXGM25N100A
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM25N100A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM25N100A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGM25N100A, IXGM25N100A Datasheet (Total Pages: 4, Size: 601.26 KB)
PDFIXGM25N100A Datasheet Cover
IXGM25N100A Datasheet Page 2 IXGM25N100A Datasheet Page 3 IXGM25N100A Datasheet Page 4

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IXGM25N100A Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 25A
Power - Max200W
Switching Energy5mJ (off)
Input TypeStandard
Gate Charge180nC
Td (on/off) @ 25°C100ns/500ns
Test Condition800V, 25A, 33Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 5A

Power - Max

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 35A

Power - Max

268W

Switching Energy

390µJ (on), 632µJ (off)

Input Type

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Gate Charge

104nC

Td (on/off) @ 25°C

46ns/105ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

120ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

144A

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Power - Max

330W

Switching Energy

625µJ (on), 1.28mJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

60ns/145ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

115ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Power - Max

333W

Switching Energy

2.6mJ

Input Type

Standard

Gate Charge

310nC

Td (on/off) @ 25°C

26ns/299ns

Test Condition

400V, 50A, 7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3-2

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 24A

Power - Max

190W

Switching Energy

320µJ (off)

Input Type

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Gate Charge

66nC

Td (on/off) @ 25°C

13ns/110ns

Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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