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IXGM30N60

IXGM30N60

For Reference Only

Part Number IXGM30N60
PNEDA Part # IXGM30N60
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM30N60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM30N60
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGM30N60 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max200W
Switching Energy-
Input TypeStandard
Gate Charge180nC
Td (on/off) @ 25°C100ns/500ns
Test Condition-
Reverse Recovery Time (trr)200ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204AE

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

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