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IXGP12N100AU1

IXGP12N100AU1

For Reference Only

Part Number IXGP12N100AU1
PNEDA Part # IXGP12N100AU1
Description IGBT 1000V 24A 100W TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP12N100AU1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP12N100AU1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP12N100AU1, IXGP12N100AU1 Datasheet (Total Pages: 4, Size: 116 KB)
PDFIXGP12N100AU1 Datasheet Cover
IXGP12N100AU1 Datasheet Page 2 IXGP12N100AU1 Datasheet Page 3 IXGP12N100AU1 Datasheet Page 4

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IXGP12N100AU1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)24A
Current - Collector Pulsed (Icm)48A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 12A
Power - Max100W
Switching Energy4mJ (off)
Input TypeStandard
Gate Charge65nC
Td (on/off) @ 25°C100ns/850ns
Test Condition800V, 12A, 120Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.6mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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TO-220-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

95µJ (on), 115µJ (off)

Input Type

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Gate Charge

35nC

Td (on/off) @ 25°C

18.5ns/72ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 4A

Power - Max

63W

Switching Energy

130µJ (on), 83µJ (off)

Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

22ns/100ns

Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IKU04N60RBKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

75W

Switching Energy

240µJ

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

14ns/146ns

Test Condition

400V, 4A, 43Ohm, 15V

Reverse Recovery Time (trr)

43ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

PG-TO251-3

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