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IXGP12N60C

IXGP12N60C

For Reference Only

Part Number IXGP12N60C
PNEDA Part # IXGP12N60C
Description IGBT 600V 24A 100W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,794
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP12N60C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP12N60C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP12N60C, IXGP12N60C Datasheet (Total Pages: 4, Size: 96.03 KB)
PDFIXGA12N60C Datasheet Cover
IXGA12N60C Datasheet Page 2 IXGA12N60C Datasheet Page 3 IXGA12N60C Datasheet Page 4

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IXGP12N60C Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)24A
Current - Collector Pulsed (Icm)48A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max100W
Switching Energy90µJ (off)
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C20ns/60ns
Test Condition480V, 12A, 18Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

-55°C ~ 150°C (TJ)

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Through Hole

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

600V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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