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IXGP12N60C

IXGP12N60C

For Reference Only

Part Number IXGP12N60C
PNEDA Part # IXGP12N60C
Description IGBT 600V 24A 100W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,794
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 27 - May 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP12N60C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP12N60C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP12N60C, IXGP12N60C Datasheet (Total Pages: 4, Size: 96.03 KB)
PDFIXGA12N60C Datasheet Cover
IXGA12N60C Datasheet Page 2 IXGA12N60C Datasheet Page 3 IXGA12N60C Datasheet Page 4

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IXGP12N60C Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)24A
Current - Collector Pulsed (Icm)48A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max100W
Switching Energy90µJ (off)
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C20ns/60ns
Test Condition480V, 12A, 18Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Power - Max

300W

Switching Energy

1.5mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

50ns/200ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 6A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

17nC

Td (on/off) @ 25°C

-/4.8µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Rohm Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

96A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

254W

Switching Energy

1.18mJ (on), 960µJ (off)

Input Type

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Gate Charge

141nC

Td (on/off) @ 25°C

52ns/180ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

22A

Vce(on) (Max) @ Vge, Ic

4.3V @ 15V, 5A

Power - Max

60W

Switching Energy

450µJ (on), 440µJ (off)

Input Type

Standard

Gate Charge

28nC

Td (on/off) @ 25°C

23ns/93ns

Test Condition

960V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

STGW30N90D

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

135A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 20A

Power - Max

220W

Switching Energy

1.66mJ (on), 4.44mJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

29ns/275ns

Test Condition

900V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

152ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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