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IXGP15N120B

IXGP15N120B

For Reference Only

Part Number IXGP15N120B
PNEDA Part # IXGP15N120B
Description IGBT 1200V 30A 150W TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP15N120B Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP15N120B
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP15N120B, IXGP15N120B Datasheet (Total Pages: 2, Size: 51.8 KB)
PDFIXGA15N120B Datasheet Cover
IXGA15N120B Datasheet Page 2

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IXGP15N120B Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 15A
Power - Max150W
Switching Energy1.75mJ (off)
Input TypeStandard
Gate Charge69nC
Td (on/off) @ 25°C25ns/180ns
Test Condition960V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 100A

Power - Max

830W

Switching Energy

10mJ (on), 33mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

960V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

TrenchStop™

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

230W

Switching Energy

770µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

193nC

Td (on/off) @ 25°C

42ns/432ns

Test Condition

400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr)

112ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

8.5A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

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Power - Max

38W

Switching Energy

80µJ (on), 160µJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

19ns/116ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

268W

Switching Energy

1.01mJ (on), 297µJ (off)

Input Type

Standard

Gate Charge

72.2nC

Td (on/off) @ 25°C

19.2ns/65.6ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

STGD8NC60KT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Power - Max

62W

Switching Energy

55µJ (on), 85µJ (off)

Input Type

Standard

Gate Charge

19nC

Td (on/off) @ 25°C

17ns/72ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

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