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IXGQ180N33TCD1

IXGQ180N33TCD1

For Reference Only

Part Number IXGQ180N33TCD1
PNEDA Part # IXGQ180N33TCD1
Description IGBT 330V 180A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,996
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ180N33TCD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ180N33TCD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGQ180N33TCD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)330V
Current - Collector (Ic) (Max)180A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 12A

Power - Max

150W

Switching Energy

160µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

24nC

Td (on/off) @ 25°C

18ns/73ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Power - Max

160W

Switching Energy

320µJ (on), 350µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

34ns/110ns

Test Condition

480V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

NGD18N40ACLBT4G

Littelfuse

Manufacturer

Littelfuse Inc.

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

430V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 4V, 15A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

IRG7PG35UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

210W

Switching Energy

1.06mJ (on), 620µJ (off)

Input Type

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Gate Charge

85nC

Td (on/off) @ 25°C

30ns/160ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

APT15GN120BDQ1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

195W

Switching Energy

410µJ (on), 950µJ (off)

Input Type

Standard

Gate Charge

90nC

Td (on/off) @ 25°C

10ns/150ns

Test Condition

800V, 15A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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