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IXGQ30N60C2D4

IXGQ30N60C2D4

For Reference Only

Part Number IXGQ30N60C2D4
PNEDA Part # IXGQ30N60C2D4
Description IGBT 600V 30A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ30N60C2D4 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ30N60C2D4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGQ30N60C2D4 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Supplier Device Package

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Infineon Technologies

Manufacturer

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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ON Semiconductor

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

130A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

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