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IXGQ90N33TCD1

IXGQ90N33TCD1

For Reference Only

Part Number IXGQ90N33TCD1
PNEDA Part # IXGQ90N33TCD1
Description IGBT 330V 90A 200W TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ90N33TCD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ90N33TCD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGQ90N33TCD1 Specifications

ManufacturerIXYS
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)330V
Current - Collector (Ic) (Max)90A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 45A
Power - Max200W
Switching Energy-
Input TypeStandard
Gate Charge69nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 30A

Power - Max

220W

Switching Energy

740µJ (on), 3mJ (off)

Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

18ns/330ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

5V @ 15V, 11A

Power - Max

190W

Switching Energy

900µJ (off)

Input Type

Standard

Gate Charge

65nC

Td (on/off) @ 25°C

36ns/160ns

Test Condition

850V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

420W

Switching Energy

2.8mJ (on), 2.3mJ (off)

Input Type

Standard

Gate Charge

345nC

Td (on/off) @ 25°C

40ns/240ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

210ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

360V

Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.6V @ 4V, 6A

Power - Max

150W

Switching Energy

-

Input Type

Logic

Gate Charge

17nC

Td (on/off) @ 25°C

-/4.8µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

IXGA20N60B

IXYS

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Power - Max

150W

Switching Energy

150µJ (on), 700µJ (off)

Input Type

Standard

Gate Charge

90nC

Td (on/off) @ 25°C

15ns/150ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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