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IXGQ96N30TBD1

IXGQ96N30TBD1

For Reference Only

Part Number IXGQ96N30TBD1
PNEDA Part # IXGQ96N30TBD1
Description IGBT 320V 96A TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,148
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGQ96N30TBD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGQ96N30TBD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
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IXGQ96N30TBD1 Specifications

ManufacturerIXYS
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)320V
Current - Collector (Ic) (Max)96A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Manufacturer

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

220W

Switching Energy

270µJ (on), 90µJ (off)

Input Type

Standard

Gate Charge

38nC

Td (on/off) @ 25°C

16ns/42ns

Test Condition

300V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

267W

Switching Energy

1.16mJ (on), 280µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

16ns/37ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

34ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

179W

Switching Energy

620µJ (off)

Input Type

Standard

Gate Charge

130nC

Td (on/off) @ 25°C

-/160ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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Manufacturer

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Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1600V

Current - Collector (Ic) (Max)

5.7A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

7.2V @ 15V, 3A

Power - Max

68W

Switching Energy

-

Input Type

Standard

Gate Charge

26nC

Td (on/off) @ 25°C

-

Test Condition

960V, 3A, 47Ohm, 10V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

IRG4BC30F-STRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

230µJ (on), 1.18mJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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