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IXGR32N90B2D1

IXGR32N90B2D1

For Reference Only

Part Number IXGR32N90B2D1
PNEDA Part # IXGR32N90B2D1
Description IGBT 900V 47A 160W ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGR32N90B2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGR32N90B2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGR32N90B2D1, IXGR32N90B2D1 Datasheet (Total Pages: 7, Size: 199.92 KB)
PDFIXGR32N90B2D1 Datasheet Cover
IXGR32N90B2D1 Datasheet Page 2 IXGR32N90B2D1 Datasheet Page 3 IXGR32N90B2D1 Datasheet Page 4 IXGR32N90B2D1 Datasheet Page 5 IXGR32N90B2D1 Datasheet Page 6 IXGR32N90B2D1 Datasheet Page 7

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IXGR32N90B2D1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)47A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 32A
Power - Max160W
Switching Energy2.2mJ (off)
Input TypeStandard
Gate Charge89nC
Td (on/off) @ 25°C20ns/260ns
Test Condition720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr)190ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOPLUS247™
Supplier Device PackageISOPLUS247™

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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585nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Package / Case

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IRG4IBC20FDPBF

Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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27nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 20A

Power - Max

208W

Switching Energy

370µJ (on), 160µJ (off)

Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

13ns/90ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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