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IXGT12N120A2D1

IXGT12N120A2D1

For Reference Only

Part Number IXGT12N120A2D1
PNEDA Part # IXGT12N120A2D1
Description IGBT 1200V TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT12N120A2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT12N120A2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGT12N120A2D1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

850V, 30A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

62A

Current - Collector Pulsed (Icm)

84A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

625W

Switching Energy

298µJ (on), 147µJ (off)

Input Type

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Gate Charge

270nC

Td (on/off) @ 25°C

35ns/142ns

Test Condition

400V, 20A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

420µJ (on), 110µJ (off)

Input Type

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Gate Charge

25.4nC

Td (on/off) @ 25°C

21ns/73ns

Test Condition

400V, 15A, 20Ohm, 15V

Reverse Recovery Time (trr)

196ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

300µJ (on), 630µJ (off)

Input Type

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Gate Charge

75nC

Td (on/off) @ 25°C

40ns/105ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IRG8CH15K10F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2V @ 15V, 10A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

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Test Condition

600V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

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