IXGT50N60B2
For Reference Only
| Part Number | IXGT50N60B2 |
| PNEDA Part # | IXGT50N60B2 |
| Description | IGBT 600V 75A 400W TO268 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 7,776 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXGT50N60B2 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXGT50N60B2 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXGT50N60B2 Specifications
| Manufacturer | IXYS |
| Series | HiPerFAST™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Power - Max | 400W |
| Switching Energy | 550µJ (off) |
| Input Type | Standard |
| Gate Charge | 140nC |
| Td (on/off) @ 25°C | 18ns/190ns |
| Test Condition | 480V, 40A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 82A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A Power - Max 160W Switching Energy 1.04mJ (on), 3.4mJ (off) Input Type Standard Gate Charge 86nC Td (on/off) @ 25°C 24ns/220ns Test Condition 960V, 21A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 72A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 24A Power - Max 250W Switching Energy 520µJ (on), 240µJ (off) Input Type Standard Gate Charge 70nC Td (on/off) @ 25°C 24ns/73ns Test Condition 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Microsemi Corporation Series POWER MOS 8™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 96A Current - Collector Pulsed (Icm) 161A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A Power - Max 416W Switching Energy 534µJ (on), 466µJ (off) Input Type Standard Gate Charge 158nC Td (on/off) @ 25°C 17ns/112ns Test Condition 400V, 32A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
