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IXGX55N120A3H1

IXGX55N120A3H1

For Reference Only

Part Number IXGX55N120A3H1
PNEDA Part # IXGX55N120A3H1
Description IGBT 1200V 125A 460W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGX55N120A3H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGX55N120A3H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXGX55N120A3H1 Specifications

ManufacturerIXYS
SeriesGenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)125A
Current - Collector Pulsed (Icm)400A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 55A
Power - Max460W
Switching Energy5.1mJ (on), 13.3mJ (off)
Input TypeStandard
Gate Charge185nC
Td (on/off) @ 25°C23ns/365ns
Test Condition960V, 55A, 3Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 42A

Power - Max

223W

Switching Energy

120µJ (on), 150µJ (off)

Input Type

Standard

Gate Charge

76nC

Td (on/off) @ 25°C

21ns/113ns

Test Condition

200V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

108A

Current - Collector Pulsed (Icm)

255A

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 30A

Power - Max

937W

Switching Energy

5.9mJ (on), 3.3mJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

28ns/150ns

Test Condition

850V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

FGA6530WDF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

176W

Switching Energy

960µJ (on), 162µJ (off)

Input Type

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Gate Charge

37.4nC

Td (on/off) @ 25°C

12ns/42.4ns

Test Condition

400V, 30A, 6Ohm, 15V

Reverse Recovery Time (trr)

81ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3PN

IGW30N65L5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™ 5

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

85A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 30A

Power - Max

227W

Switching Energy

470µJ (on), 1.35mJ (off)

Input Type

Standard

Gate Charge

168nC

Td (on/off) @ 25°C

33ns/308ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

FGB30N6S2T

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 110µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

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