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IXSK50N60BD1

IXSK50N60BD1

For Reference Only

Part Number IXSK50N60BD1
PNEDA Part # IXSK50N60BD1
Description IGBT 600V 75A 300W TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSK50N60BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSK50N60BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSK50N60BD1, IXSK50N60BD1 Datasheet (Total Pages: 5, Size: 100.32 KB)
PDFIXSX50N60BD1 Datasheet Cover
IXSX50N60BD1 Datasheet Page 2 IXSX50N60BD1 Datasheet Page 3 IXSX50N60BD1 Datasheet Page 4 IXSX50N60BD1 Datasheet Page 5

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IXSK50N60BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Power - Max300W
Switching Energy3.3mJ (off)
Input TypeStandard
Gate Charge167nC
Td (on/off) @ 25°C70ns/150ns
Test Condition480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr)35ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA(IXSK)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

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Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

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Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 25A

Power - Max

310W

Switching Energy

4.8mJ (on), 1mJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

60ns/170ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

120µJ (on), 540µJ (off)

Input Type

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Gate Charge

180nC

Td (on/off) @ 25°C

32ns/170ns

Test Condition

480V, 27A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

200W

Switching Energy

1.03mJ (on), 480µJ (off)

Input Type

Standard

Gate Charge

175nC

Td (on/off) @ 25°C

27ns/77ns

Test Condition

480V, 50A, 2Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

SGW10N60AFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 10A

Power - Max

92W

Switching Energy

320µJ

Input Type

Standard

Gate Charge

52nC

Td (on/off) @ 25°C

28ns/178ns

Test Condition

400V, 10A, 25Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

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