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IXSQ20N60B2D1

IXSQ20N60B2D1

For Reference Only

Part Number IXSQ20N60B2D1
PNEDA Part # IXSQ20N60B2D1
Description IGBT 600V 35A 190W TO3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSQ20N60B2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSQ20N60B2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSQ20N60B2D1, IXSQ20N60B2D1 Datasheet (Total Pages: 6, Size: 592.73 KB)
PDFIXSQ20N60B2D1 Datasheet Cover
IXSQ20N60B2D1 Datasheet Page 2 IXSQ20N60B2D1 Datasheet Page 3 IXSQ20N60B2D1 Datasheet Page 4 IXSQ20N60B2D1 Datasheet Page 5 IXSQ20N60B2D1 Datasheet Page 6

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IXSQ20N60B2D1 Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 16A
Power - Max190W
Switching Energy380µJ (off)
Input TypeStandard
Gate Charge33nC
Td (on/off) @ 25°C30ns/116ns
Test Condition-
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 30A

Power - Max

300W

Switching Energy

400µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

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Test Condition

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 40A

Power - Max

455W

Switching Energy

5.8mJ (on), 1.5mJ (off)

Input Type

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Gate Charge

510nC

Td (on/off) @ 25°C

41ns/200ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

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Switching Energy

220µJ (on), 330µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

31ns/100ns

Test Condition

390V, 20A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

44ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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IXGA12N60B

IXYS

Manufacturer

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

48A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

100W

Switching Energy

500µJ (off)

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

20ns/150ns

Test Condition

480V, 12A, 18Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

RJH60F4DPK-00#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.82V @ 15V, 30A

Power - Max

235.8W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

45ns/85ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

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