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IXTA1N80

IXTA1N80

For Reference Only

Part Number IXTA1N80
PNEDA Part # IXTA1N80
Description MOSFET N-CH 800V 750MA TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA1N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA1N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA1N80, IXTA1N80 Datasheet (Total Pages: 2, Size: 571.05 KB)
PDFIXTP1N80 Datasheet Cover
IXTP1N80 Datasheet Page 2

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IXTA1N80 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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