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IXTA1R6N100D2HV

IXTA1R6N100D2HV

For Reference Only

Part Number IXTA1R6N100D2HV
PNEDA Part # IXTA1R6N100D2HV
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA1R6N100D2HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA1R6N100D2HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTA1R6N100D2HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds645pF @ 10V
FET FeatureDepletion Mode
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263HV
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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